digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130108 2n3668-2n3670, 2N4103 12.5 a silicon controlled rectifier maximum ratings rating symbol 2n3668 2n3669 2n3670 2N4103 units non-repetitive peak reverse voltage v rm 150 330 660 700 v peak repetitive reverse voltage v rrm 100 200 400 600 v peak forward blocking voltage v fbom 100 200 400 600 v forward current for case temperature t c = +80c @ average dc value at a conduction angle of 180 rms value i fav i frms 8 12.5 a peak surge current for one cycle of applied voltage 60 hz (sinusoidal), t c = 80c 50 hz (sinusoidal), t c = 80c i fm 200 200 170 a fusing current (t j = -40 to +100c, t = 1 to 8.3ms) i 2 t 170 a 2 s rate of change of forward current v fb = v boo , i gt = 200ma, 0.5ns rise time di/dt 200 a/s peak gate power for 10ns duration p gm 40 w average gate power p gav 0.5 w storage temperature t stg -40 to +125 c operating case temperature t c -40 to +100 c *any values of peak gate current or peak gate voltage to give the maximum gate power is permissible. * temperature reference point is within 1/8? of the center of the underside of unit. electrical characteristics @ maximum ra tings and indicated case temperature (t c ) 2n3668 2n3669 2n3670 2N4103 characteristic symbol min typ max min typ max min typ max min typ max units peak repetitive blocking voltage @ t c = 100c v drom 100 - - 200 - - 400 - - 600 - - v forward peak blocking current @t c = 100c, v d = v drom i dom - 0.2 2 - 0.25 2.5 - 0.3 3 - 0.35 4 ma reverse peak blocking current @ t c = 100c, v r = v rrom i rom - 0.05 1 - 0.1 1.25 - 0.2 1.5 - 0.3 3 ma forward voltage drop @ 25a t c = 25c v f - 1.5 1.8 - 1.5 1.8 - 1.5 1.8 - 1.5 1.8 v dc gate-trigger current @ t c = 25c i gt 1 20 40 1 20 40 1 20 40 1 20 40 ma dc gate-trigger voltage @ t c = 25c v gt - 1.5 2 - 1.5 2 - 1.5 2 - 1.5 2 v holding current @ t c = 25c i h 0.5 25 50 0.5 25 50 0.5 25 50 0.5 25 50 ma critical rate of forward voltage v f = v boo , exponential rise t c = 100c dv/dt 10 100 - 10 100 - 10 100 - 10 100 - v/s turn-on time (delay time + rise time) v d = v drom , i t = 8a, i g = 200ma, 0.1s rise time, t c = 25c t on - 1.25 - - 1.25 - - 1.25 - - 1.25 - s turn-off time (reverse recovery time + gate recovery time) i f = 8a, 50ns pulse width, dv fs /dt = 20v/s, di r /dt = 30a/s, i gt = 200ma, t c = 80c t off - 20 50 - 20 50 - 20 50 - 20 50 s thermal resistance junction to case r ?jc - - 1.7 - - 1.7 - - 1.7 - - 1.7 c/w
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n3668-2n3670, 2N4103 12.5 a silicon controlled rectifier mechanical characteristics case to-3 marking alpha-numeric pin out see below available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. fig. 1 ? peak surge current vs. surge current duration fig. 2 - instantaneous forward current vs. instantaneous forward voltage drop fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130108
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n3668-2n3670, 2N4103 12.5 a silicon controlled rectifier fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130108
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